Samsung announces the development of the first DDR4 Module in the World

Samsung announced this morning that they developed and manufactured the world first DDR4 module. Normally set to reach mass production and availability as soon as early 2012. Replacing DDR3 memory Modules, DDR4 are supposed, according to Samsung, to be 40% more efficient in energy than its predecessors while achieving a 2.1Gbps data rate transfer.

Via: Samsung

Official Press Release

Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it completed development of the industry’s first DDR4 DRAM module last month, using 30 nanometer (nm) class* process technology.

“Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year,” said Dong Soo Jun, president, memory division, Samsung Electronics. “The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application.”

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class* process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.


The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.

By employing new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today’s typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

* Editors’ Note: 30nm-class means a process technology node somewhere between 30 and 39 nanometers.