Samsung today announced that they’ve created the industry’s first 3-bit-cell 64Gb (gigabit) NAND flash memory based on 20nm process technology. They says this new chip adopts Toggle DDR technology, giving better performance and can be used in high-density flash solutions like USB flash drives or SD memory cards.
The 8GB 20nm chip NAND flash with Toggle DDR yields 60 percent higher productivity when compared to a 30nm-class 32Gb 3-bit NAND supporting Single Data Rate (SDR).
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